Adsorption Characteristics of Powders of Nanometric Gallium Nitride and Aluminium Nitride

Thermal and electrical conductivity of Aluminium Nitride nanofluids

This study was designed to experimentally measure the thermal and electrical conductivities of Aluminium Nitride/Ethylene Glycol (AlN/EG) nanofluids. Transmission electron microscopy (TEM) was used to characterize the shape of AlN nanoparticles. Nanofluids with different particle volume concentrations of 0.5%, 1%, 2%, 3%, 4%, and 5% were utilized. The thermal and electrical conductivities of the...

Gallium Nitride Photoconductive Detectors

Since 1994, the Applied Physics Laboratory has been collaborating with NASA Goddard Space Flight Center to develop photodetectors based on gallium nitride and aluminum gallium nitride material produced in the Milton S. Eisenhower Research and Technology Development Center. This article describes the results of our collaboration and highlights the development of gallium nitride photodetectors wi...

Ultralow wear of gallium nitride

Development of Gallium Nitride Substrates

Prominent progress has been made in nitride semiconductor since high bright blue LED has developed in 1993. It has also expanded to an industry after applied to white LED. These LEDs are produced by the epitaxial growth of nitride semiconductor layers on sapphire (a Al2O3) substrate. On the other hand, recording density in optical disks has increased from CD in 1980s to DVD in latter 1990s. Las...

A computational study of Nitramide adsorption on the surface of pristine and Ni functionalized (4,4) armchair Gallium nitride nanotubes

By using the density function theory (DFT) the adsorption of nitramine (NH2NO2) molecule on the surface of pristine and Ni functionalized of Gallium nitride nanotube (GaNNTs) is investigated. The adsorption energy of NH2NO2 molecule on the surface of pristine and Ni functionalized GaNNTs is in range ‒6.59 to ‒48.16 Kcal/mol and is physisorption type. The ∆E and ∆H values of the all adsorption m...